Highly-Rectifying Graphene/GaN Schottky Contact for Self-Powered UV Photodetector

作者：Wang, Shanyong; Chen, Rongsheng; Ren, Yuan; Hu, Yawei; Yang, Ziqi; Zhou, Changjian; Lv, Yuanjie^*; Lu, Xing^*

来源：IEEE Photonics Technology Letters, 2021, 33(4): 213-216.

DOI：10.1109/LPT.2021.3052171

• Gallium nitride
• graphene
• Schottky photodiode
• self-powered
• UV detection
• fast response

In this study, we demonstrated self-powered fastresponse ultraviolet (UV) detection based on a highly-rectifying graphene/GaN Schottky contact. The device was fabricated by mechanically transferring a monolayer graphene onto lightly-doped GaN and showed excellent Schottky behaviors, including a high rectification ratio (> 10(8)), a close-to-unity ideality factor and a relatively high Schottky barrier height (1.01 eV). At zero bias, the graphene/GaN Schottky photodiodes exhibited a strong photovoltaic response to UV illumination with a competitively short rise/decay time of 221/546 mu s. A trap-associated photo-conductive mechanism started to dominate the device's response when its bias went beyond -1 V, which could be identified from the suddenly increased responsivity and response time.

• 单位
  中山大学