Carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells with different barrier thickness

摘要

Optical properties and carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells (ADQWs) with varied barrier thickness are studied by excitation-power-dependent photoluminescence (PL) and temperature-dependent time-resolved PL (TRPL) experiments. The origin of the transition energies derived from the time-integrated spectra is confirmed by theoretical calculation using the Schrodinger equation. The carrier kinetics and the temporal behavior of the emission in the narrow well (NW) and wide well (WW) are physically revealed with varying barrier thicknesses by the TRPL measurements. For a better understanding of the carrier transport mechanism, the electron tunneling times for the ADQWs are theoretically estimated based on a rate-equation model. The calculation indicates that the electron tunneling time decreases with increasing temperature, which may be induced by enhanced phonon-assisted scattering.

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