Defect Engineering of TlPt2S3 for Highly Polarization-Sensitive Photodetector

摘要

Photodetectors based on two-dimensional materials exhibit excellent performance including high specific detectivity and fast response times. However, the polarization detection performance remains to be improved. Here, we propose a strategy to improve the polarization sensitivity of TlPt2S3-based photodetectors by defect engineering based on density functional theory (DFT) calculations and investigate their optoelectronic properties using quantum transport simulations at 0.2 V bias. Theoretical calculations show that the monolayer TlPt2S3 achieves a multifunctional output of the optoelectronic device and obtains a larger photocurrent and high extinction ratio by defect engineering under linearly polarized light irradiation. These results indicate that TlPt2S3 is expected to be one of the candidate materials for future optoelectronics and polarized light devices.

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