Electrical characteristics and conductive mechanisms of AlN-based memristive devicese

摘要

Aluminum nitride (AlN) memristive devices have attracted a great deal of attention because of their compatibility with the CMOS fabrication technology, and more likely to be extended to power electronic devices. However, the conductive mechanism and the variability of resistance switching (RS) parameters are major issues for commercial applications. In this paper, we have obtained electrical characteristics of the Al/AlN/Pt memristors under the current compliance limits of 1 mu A and 10 mu A, respectively. Furthermore, the statistics of switching parameters has been done in the Set and Reset processes. Finally, a quantum point contact model has been developed to account for conducting mechanisms and shows the evolution of the conductive filament during RS transitions.

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