Novel HighHolding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

作者：Wang, Zhuo; Qi, Zhao^*; Liang, Longfei; Qiao, Ming^*; Li, Zhaoji; Zhang, Bo

来源：Nanoscale Research Letters, 2019, 14: 175.

DOI：10.1186/s11671-019-3017-8

• Electrostatic discharge (ESD)
• Silicon-controlled rectifier (SCR)
• Holding voltage (V-h)
• Latch-up
• Transmission line pulse (TLP)

A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V-h). Compared with the measured V-h of 1.8 V of low-voltage triggered silicon-controlled rectifier (LVTSCR), the V-h of HHV-SCR can be increased to 8.1 V while maintaining a sufficiently high failure current (I-t2 > 2.6 A). An improvement of over four times in the figure of merit (FOM) is achieved.

• 单位
  电子科技大学