摘要
A photonic integrated waveguide amplifier fabricated on erbium-ytterbium (Er-Yb) codoped thin-film lithium nio-bate (TFLN) has been investigated in this work. A small -signal internal net gain of 27 dB is achieved at a signal wave-length of 1532 nm in the fabricated Er-Yb TFLN waveguide amplifier pumped by a diode laser at & AP;980 nm. Experimental characterizations reveal the suitability of waveguide fabri-cation by the photolithography-assisted chemo-mechanical etching (PLACE) technique and also the gain in an Yb-sensitized-Er material. The demonstrated high-gain chip -scale TFLN amplifier is promising for interfacing with estab-lished lithium niobate integrated devices, greatly extending the spectrum of TFLN photonic applications. & COPY; 2023 Optica Publishing Group
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单位中国科学院研究生院