Rectifying and negative differential resistance in nonmetal-adsorbed black arsenic phosphorus

作者：Gong, Peng-Wei; Zhang, Xiao-Lin; Liu, Fang-Qi; Yao, Kai-Lun; Zhu, Si-Cong^*; Lu, Yan^*

来源：Journal of Physics D - Applied Physics, 2022, 55(23): 235107.

DOI：10.1088/1361-6463/ac4dcc

• arsenic-phosphorus
• p-n junction
• rectification ratio
• negative differential resistance

Recently, black arsenic phosphorus (b-AsP) has become a hot topic of two-dimensional materials research due to its high carrier mobility, tunability of the band gap in a wide range and excellent in-plane anisotropy. In this work, we use first-principle calculations to study the structural and electromagnetic properties of b-AsP with adsorbed nonmetal atoms such as B, C, N, O and F. Taking into account the great difference in the electromagnetic properties induced by adsorption of different kinds of nonmetal atoms on b-AsP, several rectifying device models are formulated. Analysis and calculations demonstrate that the device, consisting of an N atom adsorbed on b-AsP, has a rectification ratio of 10(5) and a negative differential resistance. According to our results, N-doped b-AsP can be used as a two-dimensional molecular rectifier and spin filter.

• 单位
  y; 华中科技大学