A Novel Envelope Detector Based on Unipolar Metal-Oxide TFTs

Authors：Xu, Yuming; Li, Bin; Deng, Sunbin^*; Qin, Yuning; Fan, Houbo; Zhong, Wei; Liu, Yuan; Wu, Zhaohui^*; Yeung, Fion Sze Yan; Wong, Man; Kwok, Hoi Sing; Chen, Rongsheng^*

Source：IEEE Transactions on Circuits and Systems II: Express Briefs , 2020, 67(11): 2367-2371.

DOI：10.1109/TCSII.2020.2969273

• Thin film transistors
• Amplitude shift keying
• Bidirectional control
• Envelope detectors
• Zinc oxide
• II-VI semiconductor materials
• Logic gates
• Metal-oxide thin-film transistors (TFTs)
• envelope detector (ED)
• radio frequency identification (RFID)
• near field communication (NFC) tags

The lack of an envelope detector (ED) hinders the realization of bidirectional communication between radio frequency identification (RFID)/near field communication (NFC) tags and readers in metal-oxide thin film transistor (TFT) technology. To solve this, we present a novel ED implementation based on unipolar metal-oxide TFTs. The ED is fully integrated by n-type TFTs and has a novel topology. It can detect an amplitude shift keying (ASK) signal with a minimum modulation depth of 15x0025; and a maximum envelope rate of 8kbit/s, and its minimum supply voltage reaches 2.5 V. These characteristics are greatly improved compared with those of previous works based on complementary organic or hybrid organic/metal-oxide TFTs.

• Institution
  广东工业大学