Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

作者：He, Penghui; Ding, Chunchun; Zou, Xuming; Li, Guoli; Hu, Wei; Ma, Chao; Flandre, Denis; Iniguez, Benjamin; Liao, Lei^*; Lan, Linfeng^*; Liu, Xingqiang^*

来源：Applied Physics Letters, 2022, 121(19): 193301.

DOI：10.1063/5.0098765

• STATES

The trade-off between mobility and stability in oxide thin-film transistors (TFTs) hinders further advances of an active-matrix flat panel display. Herein, a solution-processed bilayer active channel is designed to improve the stability and mobility simultaneously. The optical bandgap and work function of Tb:In2O3 films are modulated by tuning the film thickness and Tb concentration of Tb-doped indium oxide (Tb:In2O3) films. Large conduction band offset is achieved in a Tb:In2O3 bilayer channel, which induces accumulation of abundant electrons at the interface. The mobility is significantly improved to 38.2 cm(2)/V s, and the photoinduced stability of bilayer Tb:In2O3 TFTs is improved with low threshold voltage shift of 0.26 and -0.38 V under negative-bias illumination stress and negative-bias temperature illumination stress, respectively.