A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology

作者：Li, Huiyang; Xu, Jinxu^*; Zhang, Xiuyin

来源：Science China Information Sciences, 2024, 67(1): 119404.

DOI：10.1007/s11432-023-3849-x

ConclusionA three-stage Ku-band filtering LNA MMIC has been proposed using 150-nm GaN-on-SiC process in this paper. The design method has been detailed. L-C-L pi -shape networks have been designed and used as inter-stage matching networks with highpass filtering responses. To further improve the frequency selectivity and out-of-band rejection level, the LNA output matching network has been designed with a transmission zero at the lower frequency band. Then, high out-of-band rejection for image suppression was obtained. For demonstration, the proposed filtering LNA has been implemented. The operating band was measured at 12-18 GHz with an NF of 1.5-1.9 dB and a gain of 20.6 +/- 1.1 dB. High rejection levels of 34 dBc @10 GHz and 64 dBc @8 GHz have been achieved. The proposed design has been compared with previously published papers, showing good LNA performance with high image rejection.