摘要
The dark current drift caused by severe ion migration in all-inorganic perovskite CsPbBr3 degrades the stability of X-ray detection performance under a high electric field. The halogen doping is an effective method to improve the properties of the perovskites. In this work, the all-inorganic Cl-doped perovskites CsPbBr3-nCln (n=0, 0.1 and 0.5) single crystals were grown by a modified low-temperature inverse temperature crystallization (ITC) method with the growth temperature lower than the phase transition point. The trap density decreased to 3.05x10(10) cm(-3) and the carrier mobility increased to 124.75 cm(2) V-1 s(-1) for the optimum component of CsPbBr2.9Cl0.1. Furthermore, by designing the detector with an asymmetric electrode configuration, CsPbBr2.9Cl0.1 detector showed super low dark current and an outstanding hard X-ray induced photo-response under a high voltage of 200 V. Consequently, the CsPbBr2.9Cl0.1 perovskite detector delivers a high sensitivity (5593.24 mu C Gy(air)(-1) cm(-2)) and a low detection limit (0.68 mu Gy(air) s(-1)). Our low temperature solution grown Cl-doped all-inorganic perovskite single crystals efficiently improve the photoelectric properties and enhance the X-ray detection performance.
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单位山东大学