科研之友
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摘要
Following the extensive researches of graphene, 2D layered semiconductors have attracted widespread attention for their intriguing physical properties. 2D alpha-Ga2S3 as an important member of group IIIA-VIA semiconductors has outstanding optoelectronic properties. However, the controllable large-size synthesis of ultrathin alpha-Ga2S3 nanosheets still remains a huge challenge. In this paper, a large-size ultrathin nanosheets of hexagonal Ga2S3 is prepared via an improved chemical vapor deposition method. High-performance photodetectors based on the ultrathin Ga2S3 nanosheets is demonstrated. The device shows a high photosensitivity/detectivity (9.2 A W-1/1.4 x 10(12) Jones) and a fast response time (rise/fall time of <4/3 ms), respectively. Strikingly, wearable flexible photodetectors based on Ga2S3 nanosheets are fabricated accordingly and demonstrate great response performance and stability. This work provides a new direction for 2D semiconductors to apply in next-generation nanoscale smart optoelectronics.
