Facile preparation of CuO nanoplate arrays film on Si substrate and their photoelectric characteristics

摘要

Schottky contacted sensors are of promising photoelectric devices due to the intrinsic high selectivity and high sensitivity properties. However, it is still a challenge to construct a stable contacted semiconductor material in Schottky sensors. In this work, a CuO film was prepared by an ozone etching and annealing on a silicon wafer substrate. Material characteristic investigation shows that the film composed of a highly dense polycrystalline nanoplate arrays film. The film is also used to fabricate a schottky diode with aluminum electrode to test its photoelectric performance. The test results indicate that the diode has a large rectifying ratio and a highly sensitive photoreponse effect. This work provides a new facile CuO nano arrays material process for Schottky contacted sensor application.

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