The SrS doped with Cl and K: a promising ambipolar semiconductor for transparent electronics application

摘要

Wide-gap semiconductors are essential for current optoelectronics due to the good conductivity and transparency. Although the significant successes have been achieved for n-type transparent conducting materials (TCMs), the p-type TCMs seriously lag behind the n-type counterparts, which severely hinder the developments of the high-performance transparent electronic devices. In present work, we predict the transparent ambipolar conducting can be obtained in SrS by utilizing the hybrid functional method. The Cl substituting S and K substituting Sr (labeled as Cl-S and K-Sr) are typical shallow donor and acceptor defects. Compared to conduction band minimum (valence band maximum), the ionization energies for Cl-S (K-Sr) would converge to 0.02 (0.14) eV. Using the equilibrium fabricate method, the free electrons (holes) density can reach 1.24 x 10(19) cm(-3) (1.23 x 10(18) cm(-3)) at room temperature. The effective masses for electron and hole are 0.32 and 0.87 m (0) (m (0) is the mass of a free electron). In the visible light regions, the high transparency can be kept due to its weak inter-band and intra-band absorptions as well as the negligible plasmonic effect. High density of carriers, smaller effective mass and high transparency show SrS doped with Cl and K is a promising ambipolar transparent semiconductor. This work provides insights to realize the high performance ambipolar TCMs. Once the excellent ambipolar TCMs is explored, the high-performance transparent devices are expected in the future.

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