摘要
Integrated on-chip microdisk lasers have attracted great attention as a light source of compact size, low lasing threshold and narrow bandwidth. However, challenges remain unresolved in terms of single mode operation at high output power while maintaining the ultra-narrow bandwidth. In this work, we demonstrate mono-lithically integrated on-chip single-frequency disk lasers coupled with bus-waveguides fabricated by photolithography assisted chemo-mechanical etching. Owing to the long cavity lengths (e.g., 409 & mu;m and 1 mm) for high optical gain and high-Q mode regulation for suppressing multimode lasing, a disk laser with a narrow linewidth of 0.11 MHz and a maximum output power of 62.1 & mu;W has been achieved at room temperature. These two values are about one order of magnitude better than the best results previously reported on monolithically integrated LN microlasers.
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单位中国科学院; 中国科学院研究生院; y