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Alkoxy substitution on IDT-Series and Y-Series non-fullerene acceptors yielding highly efficient organic solar cells

Chen, Yuzhong*; Liu, Tao; Ma, Lik-Kuen; Xue, Wenyue; Ma, Ruijie; Zhang, Jianquan*; Ma, Chao; Kim, Ha Kyung; Yu, Han; Bai, Fujin; Wong, Kam Sing; Ma, Wei; Yan, He*; Zou, Yingping*
Science Citation Index Expanded
西安交通大学; 1

摘要

In this work, we attempt to figure out alkoxy-substitution effects on two kinds of well-known non-fullerene acceptors (NFAs), IDT-series and Y-series acceptors, by placing alkoxy side chains on the beta -positions of the outer thiophene units. The resulting molecules, named IDTN-O and Y6-O, exhibit different properties compared to the original acceptors named IDTN and Y6. The HOMO and LUMO levels of IDTN-O are slightly upshifted at the same time, which causes a slightly higher open-circuit voltage (V-oc) without sacrificing the short-circuit current density (J(sc)) of the devices. J71:IDTN-O blend films can also achieve a better blend morphology due to the conformational locking effect and higher dipole moment induced by the alkoxy groups, which helps achieve a higher fill factor (FF). In addition, Y6-O exhibits significantly upshifted LUMO levels compared to Y6, leading to a high V-oc of 0.95 V. PM6:Y6-O blend films can also maintain an optimal blend morphology through side-chain engineering, which leads to an excellent FF of 78.0%. As a result of alkoxy substitution, both IDTN-O and Y6-O-based devices can achieve better performances of 12.1% and 16.6% than IDTN and Y6-based devices (10.9% and 15.7%), which indicates that this is an effective method to optimize these two types of NFAs.

关键词

NONFULLERENE ACCEPTORS SIMULTANEOUS ENHANCEMENT VOLTAGE LOSSES ACTIVE LAYER FILL FACTOR END-GROUPS PERFORMANCE ENABLES GAP PHOTOVOLTAICS