Low-temperature fabrication of Pr-doped In2O3 electrospun nanofibers for flexible field-effect transistors

作者：Shi, Wei; Peng, Zefei; Chen, Song^*; Yan, Xueling; Xu, Hua; Liu, Lan^*

来源：Journal of Materials Chemistry C, 2022, 10(42): 15996-16003.

DOI：10.1039/d2tc03564b

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• PERFORMANCE
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Although metal oxide nanofibers (MO-NFs) based field-effect transistors (FETs) prepared by electrospinning have gained great attention, it is still challenging to develop MO-NFs directly on flexible substrates such as polyimide (PI) to achieve a high flexibility due to the high annealing temperature. In this work, using a UV pretreatment and a subsequent "combustion synthesis" process, high-quality Pr-doped In2O3 (InPrO) electrospun NFs were successfully fabricated on a flexible PI substrate at a relatively low temperature (380 degrees C). It was found that the InPrO-based flexible FET (f-FET) prepared by UV pretreatment and low annealing temperature not only has a good interfacial adhesion but also show a good flexibility. When the f-FET was wrapped around the rigid cylindrical rod with a radius of 5 mm, it exhibited good performance including a high mu(FE) of 2.12 cm(2) V-1 s(-1), a large I-on/I-off of similar to 10(8), and an excellent cycling stability (1000 bending cycles). This low-temperature processing route will certainly contribute to the future flexible electronics manufacturing.