Coupling modeling and bandpass filter design using electric and magnetic couplings on CMOS 65 nm technology

摘要

This letter presents the electric and magnetic couplings modeling on CMOS 65 nm technology. It is based on the simplified equivalent substrate model. The field distribution is studied to analyze qualitatively the electric and magnetic couplings. Based on CMOS 65 nm technology, the coupling coefficients with and without passivation are calculated quantitatively for comparisons and then the coupling characteristics are summarized. In order to demonstrate the coupling model, a bandpass filter using electric and magnetic couplings is designed. The measured bandwidth is 23 GHz centered at 63.5 GHz and the insertion loss is 3.8 dB. Good agreement between the simulated and measured results validates the coupling modeling.

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