Cotrolling electron-spin filter via electric field in layered semiconductor nanostructure

摘要

Applying a transverse electric field, we theoretically explore the control of electron-spin filter based on layered semiconductor nanostructure-InSb/InxGa1-xAs. Because of the electric field dependent effective potential of electron, not only size of spin polarization ratio but also its sign can be manipulated by changing magnitude or direction of applied electric field. An electrically-tunable electron-spin filter can be achieved for spintronics device applications.

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