Dislocation density control of GaN epitaxial film and its photodetector

摘要

At present, GaN-based ultraviolet photodetectors (UV PDs) is confronted with the challenge of high dark current and low responsivity. In this work, we designed and prepared high-performance GaN-based UV PDs on the sapphire substrates by the combination of low-temperature pulsed laser deposition (LT-PLD) and hightemperature metal-organic chemical vapor deposition growth (HT-MOCVD). The as-grown GaN film shows high-crystalline with edge dislocation density of 6.50 x 107 cm-2 and screw dislocation density of 1.92 x 108 cm-2, respectively. Furthermore, the optimized electrode structure has been well designed to enhance the carrier transport characteristics in GaN-based UV PDs, which improves the performance of GaN-based UV PDs accordingly. Based on the high-quality GaN film and the optimized electrode structure, high-performance GaNbased UV PDs are fabricated, which reveals the very high responsivity and small dark current of 1.4 A/W and 4.8 nA@5V, respectively. These high-performance GaN-based UV PDs shed light on the potential application in UV warning.

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