Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release

作者：Chen, Cheng; Yin, Yuling; Zhang, Rencong; Yuan, Qinghong; Xu, Yang; Zhang, Yushuang; Chen, Jie; Zhang, Yan; Li, Chang; Wang, Junyong; Li, Jie; Fei, Linfeng; Yu, Qiang; Zhou, Zheng; Zhang, Huisheng; Cheng, Ruiqing; Dong, Zhuo; Xu, Xiaohong; Pan, Anlian^*; Zhang, Kai^*; He, Jun^*

来源：Nature Materials, 2023, 22(6): 717-+.

DOI：10.1038/s41563-023-01516-1

• TRANSPORT
• GAP

Black phosphorus (BP), a fascinating semiconductor with high mobility and a tunable direct bandgap, has emerged as a candidate beyond traditional silicon-based devices for next-generation electronics and optoelectronics. The ability to grow large-scale, high-quality BP films is a prerequisite for scalable integrated applications but has thus far remained a challenge due to unmanageable nucleation events. Here we develop a sustained feedstock release strategy to achieve subcentimetre-size single-crystal BP films by facilitating the lateral growth mode under a low nucleation rate. The as-grown single-crystal BP films exhibit high crystal quality, which brings excellent field-effect electrical properties and observation of pronounced Shubnikov-de Haas oscillations, with high mobilities up to similar to 6,500 cm(2) V-1 s(-1) at low temperatures. We further extend this approach to the growth of single-crystal BP alloy films, which broaden the infrared emission regime of BP from 3.7 mu m to 6.9 mu m at room temperature. This work will greatly facilitate the development of high-performance electronics and optoelectronics based on BP family materials.

• 单位
  中国科学院; 武汉大学; i; 南昌大学