Improving in Light Power of AlGaN-Based UV-LED With ITO/Ag/Ga2O3 as Transparent Conductive Electrode

摘要

We proposed and fabricated an indium tin oxide (ITO)/Ag/Ga2O3 multilayer as transparent conductive electrode (TCE) for AlGaN-based ultraviolet light-emitting diode (UV LED). The effects of thickness dependence of Ga2O3 layer on the optical and electrical properties of the ITO/Ag/Ga2O3 multilayer are investigated. The ITO/Ag/Ga2O3(12nm/17.5nm/37.5nm) multilayer exhibits a small sheet resistance of 2.82 Omega/sq and a good ohmic contact characteristic with a specific contact resistance of 2.61 x 10(-3) Omega center dot cm(2). The multilayer film has a good transmittance of 86.7% at 365 nm. Compared to reference UV LED with traditional ITO as TCE, the UV LED with ITO/Ag/Ga2O3 multilayer as TCE shows an increase of 19.8% in light output power and a 0.34 V reduction in forward voltage at 120 mA.

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