A 52-73-GHz LNA With Tri-Coupled Transformer for Gm Boosting and Enhanced Noise Canceling
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摘要
This article presents a broadband low-noise amplifier (LNA) based on tri-coupled transformer (XFMR) for G(m) boosting and enhanced noise canceling (NC). In contrast to conventional NC structures, the proposed design uses the combination of a single transistor and a tri-coupled XFMR innovatively to achieve noise reduction, G(m) boosting, as well as wideband matching, simultaneously. Fabricated in a 40-nm CMOS process, the LNA achieves a 3-dB bandwidth of 22.1 GHz from 51.6 to 73.7 GHz, a peak gain of 22.4 dB, a minimum NF of 3.8 dB, and an average IP1dB of -12 dBm with a dc power consumption of 34 mW.
关键词
CMOS G(m) boosting low-noise amplifier (LNA) millimeter-Wave (mmW) noise canceling (NC) tri-coupled transformer
