Effect of the doping concentration of Er3+ on ferroelectric properties of Bi4-xErxTi3O12 films

作者：Shi, Min^*; Men, Enyang; Chen, Hao; Xu, Yudong; Zuo, Ruzhong; Bai, Tiancheng; Du, Shushu

来源：Journal of Materials Science: Materials in Electronics , 2022, 33(16): 13124-13132.

DOI：10.1007/s10854-022-08251-4

• DIELECTRIC-PROPERTIES
• THIN-FILMS
• MICROSTRUCTURE
• POLARIZATION
• LA

The Bi4-xErxTi3O12 films were deposited on the substrates via the spin-coating method. The doping of Er3+ does not give rise to the variation of phase composition and element valence state in the Bi4-xErxTi3O12 films. The Bi4-xErxTi3O12 films show dense surfaces and clear phase interfaces between the films and the substrates. And the surfaces of the Bi4-xErxTi3O12 films contain particles with various sizes and irregular shapes. The leakage current density and ferroelectricity of Er3+-doped Bi4Ti3O12 (Bi4-xErxTi3O12) are lower than those of Bi4Ti3O12 films. With increasing the doping concentration of Er3+, the values of leakage current density of Bi4-xErxTi3O12 films decrease at first and then increase. Meanwhile, the values of remanent polarization of Bi4-xErxTi3O12 films increase at the beginning and then decrease. Among the five films, the Bi3.4Er0.6Ti3O12 film exhibit smallest value of leakage current density (6.43 x 10(-7) A center dot cm(-2)) and greatest value of remanent polarization (14.4 mu C center dot cm(-2)), which indicates the better ferroelectric properties. This is beneficial for the application of ferroelectric functional devices.