Room temperature phosphorescence from Si-doped-CD-based composite materials with long lifetimes and high stability

Authors：Hu, Guangqi; Xie, Yixuan; Xu, Xiaokai; Lei, Bingfu; Zhuang, Jianle; Zhang, Xuejie; Zhang, Haoran; Hu, Chaofan^*; Ma, Wenshi^*; Liu, Yingliang^*

Source：Optics Express, 2020, 28(13): 19550-19561.

DOI：10.1364/OE.391722

• CARBON QUANTUM DOTS
• ELECTRONIC RELAXATION
• EMISSION
• DESIGN
• STATES

C-dot-based composites with phosphorescence have been widely reported due to their attractive potential in various applications. But easy quenching of phosphorescence induced by oxygen or instability of matrices remained a tricky problem. Herein, we reported a Si-doped-CD (Si-CD)-based RTP materials with long lifetime by embedding Si-CDs in sulfate crystalline matrices. The resultant Si-CD@sul fate composites exhibited a long lifetime up to 1.07 s, and outstanding stability under various ambient conditions. The intriguing RTP phenomenon was attributed to the C = O bond and the doping of Si element due to the fact that sulfates could effectively stabilize the triplet states of Si-CDs, thus enabling the intersystem crossing (ISC). Meanwhile, we confirmed that the ISC process and phosphorescence emission could be effectively regulated based on the heavy atom effect. This research introduced a new perspective to develop materials with regulated RTP performance and high stability.

• Institution
  华南农业大学; 广东技术师范学院