γ-Irradiation Damage Mechanism of InGaAs/InP p-i-n Focal Plane Array Investigated by Spatially Resolved and Temperature-Dependent Photoluminescence

作者：Cai, Yisheng; Zhu, Liangqing^*; Wang, Le; Shang, Liyan; Li, Yawei; Zhang, Jinzhong; Jiang, Kai; Hu, Zhigao

来源：Physica Status Solidi (B): Basic Research , 2023, 260(7).

DOI：10.1002/pssb.202200546

• gamma irradiation
• InGaAs infrared photodetector
• irradiation damage mechanism
• photoluminescence

InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of ? irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p-i-n focal plane array is studied by spatially resolved and temperature-dependent (3-290 K) photoluminescence (PL) measurements. By comparative PL studies of pre-irradiation and post-irradiation, the spatially resolved PL results of irradiation indicate that the in-plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature-dependence PL demonstrate that the PL integral intensity related to impurities and interface-bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by ? irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity-defect complexes. The findings reveal the effects of low-dose ? irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.