High temperature UV photodetectors based on the negative differential resistance effect of WO3/diamond PN junctions

作者：Zhang, Lin; Cheng, Shaoheng; Wang, Liying^*; Pei, Kai^*; Li, Hongdong^*

来源：Applied Physics Letters, 2023, 122(18): 182102.

DOI：10.1063/5.0152394

• ULTRAVIOLET
• DIAMOND
• FILM

A positive-negative (PN) junction tunneling diode ultraviolet (UV) photodetector of p-boron-doped diamond (BDD)/n-WO3 nanorods (NRs) with broad-band and good thermal stability was fabricated using heavily boron-doped degenerate semiconductor diamond (BDD) as a substrate. The operating temperature of the p-BDD/n-WO3 photodetector was increased to 300 degrees C through the negative differential resistance effect, benefiting from the excellent properties of diamond such as an increase in the concentration of boron atoms, a wideband gap (similar to 5.5 eV), and high thermal conductivity. In particular, the devices exhibited a negative differential resistance phenomenon in the range of 30-240 degrees C, accompanied by a rapid increase in photocurrent values and the phenomenon disappeared as the temperature rises to 300 degrees C. Moreover, a quick response speed (t(r1) = 1.2 s), a high photocurrent (0.11 A at 5 V), a good rectification ratio (1.81), and a photo to dark current ratio (0.15) can be demonstrated in the p-BDD/n-WO3 NRs photodetector at 300 degrees C, indicating its excellent thermal stability. This work provides an effective way method for realizing UV photodetectors based on the negative differential resistance effect and reclaims the potential application of p-BDD/n-WO3 in high temperature semiconductor optoelectronic devices.

• 单位
  吉林大学