Enhancing Hole Transport of Quantum-Dot Light-Emitting Diodes by a Cruciform Oligothiophene for Effective p-Type Doping

作者：Zhang, Wenjing; Ren, Fumeng; Wen, Yu^*; Xu, Zhangwang; Sun, Juan; Yan, Zhenzhen; Ding, Lei; Hai, Xia; Zhang, Qin^*

来源：Macromolecular Rapid Communications, 2022, 43(15): 2200187.

DOI：10.1002/marc.202200187

• hole transport
• oligothiophenes
• quantum dot light-emitting diodes
• red-light emission

Effective p-type doping is essential to enhance hole transport and balance electron-hole injection in quantum dot light-emitting diodes (QLEDs). Here, an oligothiophene material is adopted as a p-type dopant in the hole-transport layer, considering its cruciform cross-center structure, precise molecular weight, and high purity. Compared with the dopant-free counterpart, hole transport capability at the optimal doping level exhibits a significant improvement, producing a boosted external quantum efficiency (EQE) and luminance up to 20.8%, 213 439 cd m(-2), respectively, among the highest reported on the red-light emission. The work indicates the potential applications of oligothiophene material in red light-emitting devices.

• 单位
  y; 南昌航空大学; 华中科技大学