Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Authors：Hu, Shiben; Lu, Kuankuan; Ning, Honglong^*; Yao, Rihui; Gong, Yanfen; Pan, Zhangxu; Guo, Chan; Wang, Jiantai; Pang, Chao; Gong, Zheng^*; Peng, Junbiao

Source：Nanomaterials, 2021, 11(2): 522.

DOI：10.3390/nano11020522

• oxide semiconductor
• a-IGZO
• TFT
• X-ray reflectivity
• microwave photoconductivity decay

In this work, we performed a systematic study of the physical properties of amorphous Indium-Gallium-Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O-2/(Ar+O-2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (mu-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm(2)/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.