摘要
Highly efficient photocatalysts based on van der Waals 2D type heterojunctions were fabricated by horizontal loading of ultrathin hexagonal SnS2 nanosheets on the surface of a g-CN film via spin coating followed by annealing treatment. As evidenced by micrographs and further confirmed by the first-principles calculations, a large contact area was realized in the heterojunction interface by synthesizing sheet-like structures consisting of these two semiconductors, facilitating considerably enhanced charge separation under visible light illumination. In particular, the g-CN/SnS2 heterojunction annealed at 400 degrees C favors the bonding of Sn-N and C-S resulting in reduction of the bandgap by lowering the conduction band edge and in turn yields ideal electronic structures for photoelectrochemical hydrogen production. Such a heterojunction exhibits significantly improved photoinduced current density in sharp contrast to its isolated parent parts, namely g-CN and SnS2, by a factor of 5 and 4, respectively. The photocurrent response, together with Mott-Schottky plots and photoluminescence spectroscopy, demonstrates the photo synergetic effect of the g-CN/SnS2 heterojunction which strongly boosts the photoinduced interfacial charge transfer, enhancing the charge separation during the reaction and lowering the recombination rate.
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单位山东大学