Article High sensitivity of room-temperature terahertz photodetector based on silicon

作者：Qiu, Qinxi; Ma, Wanli; Li, Jingbo; Jiang, Lin; Mao, Wangchen; Lu, Xuehui; Yao, Niangjuan; Shi, Yi; Huang, Zhiming^*

来源：iScience, 2022, 25(10): 105217.

DOI：10.1016/j.isci.2022.105217

Silicon (Si) is the most important semiconductor material broadly used in both electronics and optoelectronics. However, the performance of Si-based room temperature detectors is far below the requirements for direct detection in the terahertz (THz) band, a very promising electromagnetic band for the next-generation technology. Here, we report a high sensitivity of room temperature THz photodetector utilizing the electromagnetic induced well mechanism with an SOI-based structure for easy integration. The detector achieves a responsivity of 122 kV W-1, noise equivalent power ( NEP) of 0.16 pW Hz(-1/2), and a fast response of 1.29 mu s at room temperature. The acquired NEP of the detector is similar to 2 orders lower in magnitude than that of other types of Si-based detectors. Our results pave the way to realize Si-based THz focal plane arrays, which can be used in a wide range of applications, such as medical diagnosis, remote sensing, and security inspection.

• 单位
  1; 中国科学院研究生院; 复旦大学