Investigation of the ZnSxSe1-x thin films prepared by chemical bath deposition

作者：Liu Jun; Wei Ai Xiang^*; Zhuang Mi Xue; Zhao Yu

来源：Journal of Materials Science: Materials in Electronics , 2013, 24(4): 1348-1353.

DOI：10.1007/s10854-012-0932-1

The ZnSxSe1-x thin films were prepared by chemical bath deposition technique on glass substrates. The composition 'x' was varied from 0 to 1 by changing the concentration of thiourea and sodium selenosulphate in the precursors. The morphology, structural and optical properties of the ZnSxSe1-x thin films were characterized by energy dispersive spectrometer, scanning electron microscopy, X-ray diffraction and UV-Vis spectrophotometer. The results reveal that the ZnSxSe1-x films are cubic zinc blende structure for x = 0, 0.19, 0.25, and amorphous for x = 0.75, 1. The optical band gap of the ZnSxSe1-x films increase from 2.88 to 3.76 eV when the value of 'x' increases from 0 to 1. The growth mechanism of the ZnSxSe1-x films was discussed.

• 单位
  广东工业大学