Investigation of the ZnSxSe1-x thin films prepared by chemical bath deposition

摘要

The ZnSxSe1-x thin films were prepared by chemical bath deposition technique on glass substrates. The composition 'x' was varied from 0 to 1 by changing the concentration of thiourea and sodium selenosulphate in the precursors. The morphology, structural and optical properties of the ZnSxSe1-x thin films were characterized by energy dispersive spectrometer, scanning electron microscopy, X-ray diffraction and UV-Vis spectrophotometer. The results reveal that the ZnSxSe1-x films are cubic zinc blende structure for x = 0, 0.19, 0.25, and amorphous for x = 0.75, 1. The optical band gap of the ZnSxSe1-x films increase from 2.88 to 3.76 eV when the value of 'x' increases from 0 to 1. The growth mechanism of the ZnSxSe1-x films was discussed.

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